IEC 60747-6:2016 provides standards for the following types of discrete semiconductor devices: – reverse-blocking triode thyristors; – reverse-conducting (triode) thyristors; – bidirectional triodethyristors (triacs); – turn-off thyristors. This edition includes the following significant technical changes with respect to the previous edition: a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions; b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third edition; c) Clause 8 and 9 were deleted in this third edition; d) Annex A was deleted. This publication is to be read in conjunction with \/2.<\/p>\n
| PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
|---|---|---|---|---|---|---|---|
| 254<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
| 259<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 261<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 3.1 General <\/td>\n<\/tr>\n | ||||||
| 262<\/td>\n | 3.2 Terms and definitions related to ratings and characteristics: currents Figures Figure 1 \u2013 Peak values of on-state currents <\/td>\n<\/tr>\n | ||||||
| 263<\/td>\n | 3.3 Terms and definitions related to ratings and characteristics: gate voltages and currents <\/td>\n<\/tr>\n | ||||||
| 264<\/td>\n | 3.4 Terms and definitions related to ratings and characteristics: power and energy dissipation 3.4.1 General 3.4.2 Instantaneous power during a cycle <\/td>\n<\/tr>\n | ||||||
| 265<\/td>\n | Figure 2 \u2013 Partial power (dissipation) of turn-off thyristors at absolute long on-state period <\/td>\n<\/tr>\n | ||||||
| 266<\/td>\n | 3.4.3 Mean power dissipation <\/td>\n<\/tr>\n | ||||||
| 267<\/td>\n | 3.4.4 Energy dissipation Figure 3 \u2013 Components of dynamic on-state energy dissipation of turn-off thyristors at absolute short on-state period <\/td>\n<\/tr>\n | ||||||
| 268<\/td>\n | 3.5 Terms and definitions related to ratings and characteristics: recovery times and other characteristics 3.5.1 On-state 3.5.2 Recovery times Figure 4 \u2013 Reverse recovery time <\/td>\n<\/tr>\n | ||||||
| 269<\/td>\n | Figure 5 \u2013 Off-state recovery time <\/td>\n<\/tr>\n | ||||||
| 270<\/td>\n | 3.5.3 Times and rates of rise characterizing gate-controlled turn-on Figure 6 \u2013 Circuit-commutated turn-off time <\/td>\n<\/tr>\n | ||||||
| 271<\/td>\n | 3.5.4 Times and rates of rise characterizing gate-controlled turn-off Figure 7 \u2013 Gate-controlled turn-on times <\/td>\n<\/tr>\n | ||||||
| 273<\/td>\n | Figure 8 \u2013 Gate-controlled turn-off times <\/td>\n<\/tr>\n | ||||||
| 274<\/td>\n | 3.5.5 Recovered charges 3.6 Mechanical ratings Figure 9 \u2013 Recovered charge Qr <\/td>\n<\/tr>\n | ||||||
| 275<\/td>\n | 4 Letter symbols 4.1 General 4.2 Additional general subscripts 4.3 List of letter symbols Tables Table 1 \u2013 Additional general subscripts <\/td>\n<\/tr>\n | ||||||
| 276<\/td>\n | Table 2 \u2013 Principal voltages, anode-cathode voltages Table 3 \u2013 Principal currents, anode currents, cathode currents Table 4 \u2013 Gate voltages Table 5 \u2013 Gate currents <\/td>\n<\/tr>\n | ||||||
| 277<\/td>\n | Table 6 \u2013 Time quantities Table 7 \u2013 Power dissipation Table 8 \u2013 Sundry quantities <\/td>\n<\/tr>\n | ||||||
| 278<\/td>\n | 5 Ratings and characteristics for thyristors 5.1 Ratings (limiting values) 5.1.1 Storage temperatures (Tstg) 5.1.2 Junction temperature (Tvj(min), Tvjm) 5.1.3 Operating ambient or case temperature (Ta or Tc) 5.1.4 Total power dissipation (Ptot or PC) 5.1.5 Gate power dissipation 5.1.6 Frequency ratings 5.1.7 Special requirements for mounting <\/td>\n<\/tr>\n | ||||||
| 279<\/td>\n | 5.1.8 Principle anode-cathode voltages 5.1.9 Gate voltages <\/td>\n<\/tr>\n | ||||||
| 280<\/td>\n | 5.1.10 Principal anode cathode currents Figure 10 \u2013 Application of gate voltages for thyristors <\/td>\n<\/tr>\n | ||||||
| 284<\/td>\n | Figure 11 \u2013 Peak sinusoidal curents and typical waveforms at higher frequencies <\/td>\n<\/tr>\n | ||||||
| 286<\/td>\n | Figure 12 \u2013 Peak trapezoidal currents and typical waveforms at higher frequencies <\/td>\n<\/tr>\n | ||||||
| 287<\/td>\n | 5.1.11 Peak forward gate current (IFGM) 5.2 Characteristics 5.2.1 General 5.2.2 Reverse current (IR) 5.2.3 Reverse conducting voltage (VRC) (for reverse conducting thyristors) 5.2.4 Continuous (direct) off-state current (ID) 5.2.5 On-state voltage (VT) 5.2.6 On-state characteristics (where appropriate) <\/td>\n<\/tr>\n | ||||||
| 288<\/td>\n | 5.2.7 Peak sinusoidal on-state voltage (VTM) 5.2.8 Threshold voltage (VT(TO) \/ VTO) 5.2.9 On-state slope resistance (rT) 5.2.10 Holding current (IH) 5.2.11 Latching current (IL) 5.2.12 Repetitive peak off-state current (IDRM) 5.2.13 Repetitive peak reverse current (IRRM) <\/td>\n<\/tr>\n | ||||||
| 289<\/td>\n | 5.2.14 Gate-trigger current (IGT) and gate-trigger voltage (VGT) 5.2.15 Gate non-trigger current (IGD) and gate non-trigger voltage (VGD) <\/td>\n<\/tr>\n | ||||||
| 290<\/td>\n | 5.2.16 Sustaining gate current (IFGsus) for GTO only 5.2.17 Peak gate turn-off current (IRGQM) for GTO only 5.2.18 Peak tail current (IZM) for GTO only Figure 13 \u2013 Forward gate voltage versus forward gate current <\/td>\n<\/tr>\n | ||||||
| 291<\/td>\n | 5.2.19 Characteristic time intervals Figure 14 \u2013 Examples of current and voltage wave shapes during turn-off of a thyristor under various circuit conditions <\/td>\n<\/tr>\n | ||||||
| 293<\/td>\n | 5.2.20 Total power dissipation Figure 15 \u2013 Curves with total energy dissipation Ep as parameter and sinusoidal current pulse <\/td>\n<\/tr>\n | ||||||
| 294<\/td>\n | 5.2.21 Turn-on energy dissipation (EON) for GTO preferably 5.2.22 On-state energy dissipation (ET) for GTO preferably Figure 16 \u2013 Curves with total energy dissipation Ep as parameter and trapezoidal current pulse <\/td>\n<\/tr>\n | ||||||
| 295<\/td>\n | 5.2.23 Turn-off energy dissipation (EQ) for GTO preferably 5.2.24 Recovered charge (Qr) (where appropriate) 5.2.25 Peak reverse recovery current (Irrm)(where appropriate) 5.2.26 Reverse recovery time (trr) (where appropriate) 5.2.27 Thermal resistance junction to ambient (Rth(j-a)) 5.2.28 Thermal resistance junction to case (Rth(j-c)) 5.2.29 Thermal resistance case to heat sink (Rth(c-s)) Figure 17 \u2013 Recovered charge Qr, peak reverse recovery current Irrm, reverse recovery time trr (idealized characteristics) <\/td>\n<\/tr>\n | ||||||
| 296<\/td>\n | 5.2.30 Thermal resistance junction to heat sink (Rth(j-s)) 5.2.31 Transient thermal impedance junction to ambient (Zth(j-a)) 5.2.32 Transient thermal impedance junction to case (Zth(j-c)) 5.2.33 Transient thermal impedance junction to heat sink (Zth(j-s)) 6 Measuring and test methods 6.1 General 6.2 Measuring methods for electrical characteristics 6.2.1 On-state voltage (VT) <\/td>\n<\/tr>\n | ||||||
| 297<\/td>\n | Figure 18 \u2013 Circuit for measurement of on-state voltage (d.c. method) Figure 19 \u2013 Circuit for measurement of on-state voltage (oscilloscope method) <\/td>\n<\/tr>\n | ||||||
| 298<\/td>\n | Figure 20 \u2013 Graphic representation of on-state voltage versus current characteristic (oscilloscope method) Figure 21 \u2013 Circuit diagram for measurement of on-state voltage (pulse method) <\/td>\n<\/tr>\n | ||||||
| 299<\/td>\n | 6.2.2 Repetitive peak reverse current (IRRM) <\/td>\n<\/tr>\n | ||||||
| 300<\/td>\n | 6.2.3 Latching current (IL) Figure 22 \u2013 Circuit diagram for measuring peak reverse current <\/td>\n<\/tr>\n | ||||||
| 301<\/td>\n | Figure 23 \u2013 Circuit diagram for measuring latching current <\/td>\n<\/tr>\n | ||||||
| 302<\/td>\n | 6.2.4 Holding current (IH) Figure 24 \u2013 Waveform of the latching current <\/td>\n<\/tr>\n | ||||||
| 303<\/td>\n | 6.2.5 Off-state current (ID) Figure 25 \u2013 Circuit diagram for measuring holding current <\/td>\n<\/tr>\n | ||||||
| 304<\/td>\n | 6.2.6 Repetitive peak off state current (IDRM) Figure 26 \u2013 Circuit diagram for measuring off-state current (d.c. method) Figure 27 \u2013 Circuit diagram for measuring peak off-state current <\/td>\n<\/tr>\n | ||||||
| 305<\/td>\n | 6.2.7 Gate trigger current or voltage (IGT), (VGT) Figure 28 \u2013 Circuit diagram for measuring gate trigger current and\/or voltage <\/td>\n<\/tr>\n | ||||||
| 306<\/td>\n | 6.2.8 Gate non-trigger voltage (VGD) and gate non-trigger current (IGD) <\/td>\n<\/tr>\n | ||||||
| 307<\/td>\n | Figure 29 \u2013 Circuit diagram for measuring gate non-trigger current and\/or voltage <\/td>\n<\/tr>\n | ||||||
| 308<\/td>\n | 6.2.9 Gate controlled delay time (td) and turn-on time (tgt) Figure 30 \u2013 Circuit diagram for measuring the gate controlled delay time and turn-on time <\/td>\n<\/tr>\n | ||||||
| 309<\/td>\n | Figure 31 \u2013 On-state current waveform of a thyristor <\/td>\n<\/tr>\n | ||||||
| 310<\/td>\n | 6.2.10 Circuit commutated turn-off time (tq) Figure 32 \u2013 Off-state voltage and current waveform of a thyristor <\/td>\n<\/tr>\n | ||||||
| 311<\/td>\n | Figure 33 \u2013 Thyristor switching waveforms <\/td>\n<\/tr>\n | ||||||
| 312<\/td>\n | Figure 34 \u2013 Diagram of basic circuit <\/td>\n<\/tr>\n | ||||||
| 313<\/td>\n | 6.2.11 Critical rate of rise of off-state voltage (dv\/dt(cr)) Figure 35 \u2013 Circuit diagram for measuring critical rate of rise of off-state voltage Figure 36 \u2013 Waveform <\/td>\n<\/tr>\n | ||||||
| 314<\/td>\n | Figure 37 \u2013 Measurement circuit for exponential rate of rise <\/td>\n<\/tr>\n | ||||||
| 315<\/td>\n | 6.2.12 Critical rate of rise of commutating voltage of triacs (dv\/dt(com)) <\/td>\n<\/tr>\n | ||||||
| 316<\/td>\n | Figure 38 \u2013 Measurement circuit for critical rate of rise of commutating voltage <\/td>\n<\/tr>\n | ||||||
| 317<\/td>\n | Figure 39 \u2013 Waveforms <\/td>\n<\/tr>\n | ||||||
| 318<\/td>\n | Figure 40 \u2013 Circuit diagram for high current triacs <\/td>\n<\/tr>\n | ||||||
| 319<\/td>\n | Figure 41 \u2013 Waveforms with high and low di\/dt <\/td>\n<\/tr>\n | ||||||
| 321<\/td>\n | 6.2.13 Recovered charge (Qr) and reverse recovery time (trr) Figure 42 \u2013 Circuit diagram for recovered charge and reverse recovery time (half sine wave method) <\/td>\n<\/tr>\n | ||||||
| 322<\/td>\n | Figure 43 \u2013 Current waveform through the thyristor T <\/td>\n<\/tr>\n | ||||||
| 323<\/td>\n | Figure 44 \u2013 Circuit diagram for recovered charge and reverse recover time (rectangular wave method) <\/td>\n<\/tr>\n | ||||||
| 324<\/td>\n | Figure 45 \u2013 Current waveform through the thyristor T <\/td>\n<\/tr>\n | ||||||
| 325<\/td>\n | 6.2.14 Circuit commutated turn-off time (tq) of a reverse conducting thyristor Figure 46 \u2013 Circuit diagram for measuring circuit commutated turn-off time of reverse conducting thyristor <\/td>\n<\/tr>\n | ||||||
| 326<\/td>\n | Figure 47 \u2013 Current and voltage waveforms of commutated turn-off time of reverse conducting thyristor <\/td>\n<\/tr>\n | ||||||
| 327<\/td>\n | 6.2.15 Turn-off behaviour of turn-off thyristors (for GTO) <\/td>\n<\/tr>\n | ||||||
| 328<\/td>\n | Figure 48 \u2013 Circuit diagram to measure turn-off behaviour of turn-off thyristors Figure 49 \u2013 Voltage and current waveforms during turn-off <\/td>\n<\/tr>\n | ||||||
| 330<\/td>\n | 6.2.16 Total energy dissipation during one cycle (for fast switching thyristors) <\/td>\n<\/tr>\n | ||||||
| 331<\/td>\n | 6.3 Verification test methods for ratings (limiting values) 6.3.1 Non-repetitive peak reverse voltage (VRSM) Figure 50 \u2013 Circuit diagram for measuring non-repetitive peak reverse voltage rating <\/td>\n<\/tr>\n | ||||||
| 332<\/td>\n | 6.3.2 Non-repetitive peak off-state voltage (VDSM) Figure 51 \u2013 Circuit diagram for measuring non-repetitive peak off-state voltage rating <\/td>\n<\/tr>\n | ||||||
| 333<\/td>\n | 6.3.3 Surge (non-repetitive) on-state current (ITSM) <\/td>\n<\/tr>\n | ||||||
| 334<\/td>\n | Figure 52 \u2013 Circuit diagram for measuring surge (non-repetitive) on-state current rating <\/td>\n<\/tr>\n | ||||||
| 335<\/td>\n | 6.3.4 On-state current ratings of fast-switching thyristors <\/td>\n<\/tr>\n | ||||||
| 336<\/td>\n | Figure 53 \u2013 Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage <\/td>\n<\/tr>\n | ||||||
| 337<\/td>\n | Figure 54 \u2013 Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage <\/td>\n<\/tr>\n | ||||||
| 339<\/td>\n | Figure 55 \u2013 Basic circuit and test waveforms for sinusoidal on-state current with reverse voltage suppressed. <\/td>\n<\/tr>\n | ||||||
| 340<\/td>\n | Figure 56 \u2013 Extended circuit diagram for measuring sinusoidal on-state current with reverse voltage suppressed <\/td>\n<\/tr>\n | ||||||
| 342<\/td>\n | Figure 57 \u2013 Basic circuit diagram and test waveforms for trapezoidal on-state current with reverse voltage applied <\/td>\n<\/tr>\n | ||||||
| 344<\/td>\n | Figure 58 \u2013 Basic circuit and test waveforms for trapezoidal on-state current with reverse voltage suppressed <\/td>\n<\/tr>\n | ||||||
| 346<\/td>\n | 6.3.5 Critical rate of rise of on-state current (di\/dt(cr)) Figure 59 \u2013 Circuit diagram for measuring critical rate of rise of on-state current <\/td>\n<\/tr>\n | ||||||
| 348<\/td>\n | Figure 60 \u2013 On-state current waveform for di\/dt rating <\/td>\n<\/tr>\n | ||||||
| 349<\/td>\n | 6.3.6 Peak case non-rupture current (IRSMC) Figure 61 \u2013 Circuit diagram for measuring peak case non-rupture current Figure 62 \u2013 Waveform of the reverse current iR through the thyristor under test <\/td>\n<\/tr>\n | ||||||
| 350<\/td>\n | 6.4 Measuring methods for thermal characteristics 6.4.1 General 6.4.2 Measurement of the case temperature <\/td>\n<\/tr>\n | ||||||
| 351<\/td>\n | 6.4.3 Measuring methods for thermal resistance (Rth) and transient thermal impedance (Zth) 6.4.4 Measurement method of thermal resistance and impedance (Method A) <\/td>\n<\/tr>\n | ||||||
| 352<\/td>\n | Figure 63 \u2013 Basic circuit diagram for the measurement of Rth (Method A) <\/td>\n<\/tr>\n | ||||||
| 353<\/td>\n | Figure 64 \u2013 Basic circuit diagram for the measurement of Zth(t) (Method A) <\/td>\n<\/tr>\n | ||||||
| 354<\/td>\n | 6.4.5 Measurement method of thermal resistance and impedance (Method B) <\/td>\n<\/tr>\n | ||||||
| 355<\/td>\n | Figure 65 \u2013 Superposition of the reference current pulse on different on-state currents <\/td>\n<\/tr>\n | ||||||
| 356<\/td>\n | Figure 66 \u2013 Waveforms for power dissipation and virtual junction temperature (general case) <\/td>\n<\/tr>\n | ||||||
| 358<\/td>\n | Figure 67 \u2013 Calibration curve <\/td>\n<\/tr>\n | ||||||
| 360<\/td>\n | Figure 68 \u2013 Basic circuit diagram for the measurement of Rth (Method B) <\/td>\n<\/tr>\n | ||||||
| 361<\/td>\n | Figure 69 \u2013 Waveforms for measuring thermal resistance <\/td>\n<\/tr>\n | ||||||
| 363<\/td>\n | Figure 70 \u2013 Basic circuit diagram for the measurement of Zth(t) (Method B) Figure 71 \u2013 Waveforms for measuring transient thermal impedance <\/td>\n<\/tr>\n | ||||||
| 365<\/td>\n | 6.4.6 Measurement method of thermal resistance and impedance (Method C, for GTO thyristors only) <\/td>\n<\/tr>\n | ||||||
| 366<\/td>\n | Figure 72 \u2013 Basic circuit diagram for the measurement of Rth (Method C) Figure 73 \u2013 Waveforms for measuring thermal resistance <\/td>\n<\/tr>\n | ||||||
| 368<\/td>\n | Figure 74 \u2013 Basic circuit diagram for the measurement of Zth(t) (Method C) Figure 75 \u2013 Waveforms for measuring the transient thermal impedance of a gate turn-off thyristor <\/td>\n<\/tr>\n | ||||||
| 369<\/td>\n | 6.4.7 Measurement method of thermal resistance and impedance (Method D, for GTO thyristors only) <\/td>\n<\/tr>\n | ||||||
| 370<\/td>\n | Figure 76 \u2013 Calibration and measurement arrangement for the heat flow method <\/td>\n<\/tr>\n | ||||||
| 372<\/td>\n | 7 Requirements for type tests and routine tests, marking of thyristors and endurance tests 7.1 Type tests 7.2 Routine tests <\/td>\n<\/tr>\n | ||||||
| 373<\/td>\n | 7.3 Measuring and test methods 7.4 Marking of thyristors 7.5 Endurance tests Table 9 \u2013 Minimum type and routine tests for reverse-blocking triode thyristors <\/td>\n<\/tr>\n | ||||||
| 374<\/td>\n | 7.5.3 Acceptance-defining characteristics and criteria for endurance tests 7.5.4 Acceptance-defining characteristics and criteria for reliability tests 7.5.5 Procedure in case of a testing error Table 10 \u2013 Acceptance-defining characteristics after endurance tests <\/td>\n<\/tr>\n | ||||||
| 375<\/td>\n | Table 11 \u2013 Conditions for endurance tests <\/td>\n<\/tr>\n | ||||||
| 376<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Tracked Changes. Semiconductor devices – Discrete devices. Thyristors<\/b><\/p>\n |