{"id":234017,"date":"2024-10-19T15:15:45","date_gmt":"2024-10-19T15:15:45","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-62047-362019\/"},"modified":"2024-10-25T09:47:12","modified_gmt":"2024-10-25T09:47:12","slug":"bs-iec-62047-362019","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-62047-362019\/","title":{"rendered":"BS IEC 62047-36:2019"},"content":{"rendered":"
This part of IEC 62047 specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under electrical stress, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e., piezoelectric thin films used as actuators.<\/p>\n
This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Testing procedure 4.1 General <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 4.2 Initial measurements 4.3 Tests 4.3.1 DUT setup and environmental conditions 4.3.2 Test duration 4.3.3 Number of tests and number of DUTs Figures Figure 1 \u2013 Flow of the testing procedure <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 4.4 Post treatment 4.5 Final measurements 5 Environmental and dielectric withstand testing 5.1 Environmental testing 5.1.1 General <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 5.1.2 High temperature bias test 5.1.3 High temperature and high humidity bias test 5.1.4 High temperature storage Tables Table 1 \u2013 Selectable test conditions <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 5.1.5 Low temperature storage 5.1.6 High temperature and high humidity storage 5.1.7 Soldering heat test Table 2 \u2013 Selectable test conditions Table 3 \u2013 Soldering heat test condition <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 5.1.8 Temperature cycling test Figure 2 \u2013 Temperature profile for reflow soldering with lead-free solder Table 4 \u2013 Conditions of temperature profile for reflow soldering with lead-free solder <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 5.2 Dielectric withstand testing Figure 3 \u2013 Temperature profile of the temperature cycling test <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | Figure 4 \u2013 Example of a dielectric withstand test circuit for DC voltage <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | Annex A (informative)Report of test results A.1 General A.2 Environmental test A.3 Dielectric withstand test Table A.1 \u2013 High-temperature test <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | Figure A.1 \u2013 I-V measurement Figure A.2 \u2013 Optical image of top electrodes before and after breakdown Table A.2 \u2013 Dielectric withstand test <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Micro-electromechanical devices – Environmental and dielectric withstand test methods for MEMS piezoelectric thin films<\/b><\/p>\n |