BSI PD IEC/TR 62240-1:2013
$198.66
Process management for avionics. Electronic components capability in operation – Temperature uprating
Published By | Publication Date | Number of Pages |
BSI | 2013 | 56 |
This Technical Report provides information when using semiconductor devices in wider temperature ranges than those specified by the device manufacturer. The uprating solutions described herein are considered exceptions, when no reasonable alternatives are available; otherwise devices are utilized within the manufacturers’ specifications.
The terms “uprating” and “thermal uprating” are being used increasingly in avionics industry discussions and meetings, and clear definitions are included in Clause 3. They were coined as shorthand references to a special case of methods commonly used in selecting components for circuit design.
This technical report describes the methods and processes for implementing this special case.
All of the elements of these methods and processes employ existing, commonly used best engineering practices. No new or unique engineering knowledge is needed to follow these processes: only a rigorous application of the overall approach.
Even though the device is used at wider temperatures, the wider temperatures usage will be limited to those that do not compromise applications performance and reliability, particularly for devices with narrow feature size geometries (e.g., 90 nm and less). This technical report does not imply that applications use the device to function beyond the absolute maximum rating limits of the device specified by the original device manufacturer and assumes that:
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device usage outside the original device manufacturers’ specified temperature ranges is done only when no reasonable alternative approach is available and is performed with appropriate justification;
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if it is necessary to use devices outside the original device manufacturers’ specified temperature ranges, it is done with documented and controlled processes that assure integrity of the equipment.
PDF Catalog
PDF Pages | PDF Title |
---|---|
4 | CONTENTS |
6 | FOREWORD |
8 | INTRODUCTION |
9 | 1 Scope 2 Normative references 3 Terms, definitions and abbreviations 3.1 Terms and definitions |
12 | 3.2 Abbreviations 4 Selection provisions 4.1 General 4.2 Device selection, usage and alternatives 4.2.1 General |
13 | 4.2.2 Alternatives 4.2.3 Device technology 4.2.4 Compliance with the electronic component management plan |
14 | 4.3 Device capability assessment 4.3.1 General 4.3.2 Device package and internal construction capability assessment 4.3.3 Risk assessment (assembly level) |
15 | 4.3.4 Device uprating methods |
16 | 4.3.5 Device reliability assurance |
17 | 4.4 Device quality assurance in wider temperature ranges 4.4.1 General 4.4.2 Device parameter re-characterisation testing 4.4.3 Device parameter conformance testing 4.4.4 Higher assembly level testing |
18 | 4.4.5 Semiconductor device change monitoring 4.4.6 Failure data collection and analysis 4.5 Documentation 4.6 Device identification |
20 | Figure 1 – Flow chart for semiconductor devices in wider temperature ranges |
21 | Figure 2 – Report form for documenting device usage in wider temperature ranges |
22 | Annex A (informative)Device parameter re-characterisation |
23 | Figure A.1 – Parameter re-characterisation |
25 | Figure A.2 – Flow diagram of parameter re-characterisation capability assurance process |
26 | Table A.1 – Example of sample size calculation |
28 | Figure A.3 – Margin in electrical parameter measurement based on the results of the sample test |
29 | Figure A.4 – Schematic diagram of parameter limit modifications Table A.2 – Parameter re-characterisation example: SN74ALS244 Octal Buffer/Driver |
30 | Figure A.5 – Parameter re-characterisation device quality assurance |
31 | Figure A.6 – Schematic of outlier products that may invalidate sample testing |
32 | Figure A.7 – Example of intermediate peak of an electrical parameter: voltage feedback input threshold change for Motorola MC34261 power factor controller [4] |
33 | Figure A.8 – Report form for documenting device parameter re-characterisation |
34 | Annex B (informative)Stress balancing |
36 | Figure B.1 – Iso-TJ curve: the relationship between ambient temperature and dissipated power |
37 | Figure B.2 – Graph of electrical parameters versus dissipated power |
40 | Figure B.3 – Iso-TJ curve for the Fairchild MM74HC244 |
41 | Figure B.4 – Power versus frequency curve for the Fairchild MM74HC244 |
42 | Figure B.5 – Flow chart for stress balancing |
43 | Figure B.6 – Report form for documenting stress balancing |
44 | Annex C (informative)Parameter conformance assessment |
45 | Figure C.1 – Relationship of temperature ratings, requirements and margins |
47 | Figure C.2 – Typical fallout distribution versus Treq-max |
49 | Figure C.3 – Parameter conformance assessment flow |
50 | Figure C.4 – Report form for documenting parameter conformance testing |
51 | Annex D (informative)Higher assembly level testing |
52 | Figure D.1 – Flow chart of higher level assembly testing |
53 | Figure D.2 – Report form for documenting higher level assembly test at temperature extremes |
54 | Bibliography Figures Tables |