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BS ISO 17915:2018

$167.15

Optics and photonics. Measurement method of semiconductor lasers for sensing

Published By Publication Date Number of Pages
BSI 2018 38
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This document describes methods of measuring temperature and injected current dependence of lasing wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications.

This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.

PDF Catalog

PDF Pages PDF Title
2 National foreword
6 Foreword
7 Introduction
9 1 Scope
2 Normative references
3 Terms and definitions
4 Optical sensing using semiconductor lasers
4.1 General
4.2 Semiconductor laser
4.2.1 General
10 4.2.2 Basic structure
4.2.3 Transverse mode stabilizing structure
4.2.4 Mode (wavelength) selection structure
4.2.5 Active layer structure
11 4.3 Common sensing technique and equipment using semiconductor lasers
4.3.1 General
4.3.2 Tunable laser absorption spectroscopy (TLAS)
12 4.3.3 Cavity ring down spectroscopy (CRDS)
13 4.3.4 Photoacoustic spectroscopy (PAS)
14 4.4 Temperature and current dependence of wavelength
16 4.5 Effect of current injection on lasing wavelength
17 4.6 Effect of ambient temperature on lasing wavelength
18 5 Measurement method for temperature dependence of wavelength
5.1 General
5.2 Description of measurement setup and requirements
19 5.3 Precautions to be observed
20 5.4 Measurement procedures
6 Measurement method for current dependence of wavelength
6.1 General
6.2 Description of measurement setup and requirements
21 6.3 Precautions to be observed
22 6.4 Measurement procedures
6.4.1 Static current dependence
6.4.2 Dynamic current coefficient
7 Measurement method of spectral line width
7.1 General
23 7.2 Description of measurement setup and requirements
26 7.3 Precautions to be observed
7.4 Measurement procedures
7.4.1 System employing two semiconductor lasers [shown in Figures 11 and 12]
7.4.2 Self-delayed heterodyne [shown in Figure 13]
28 Annex A (informative) Essential ratings and characteristics
37 Bibliography
BS ISO 17915:2018
$167.15