BS ISO 17915:2018
$167.15
Optics and photonics. Measurement method of semiconductor lasers for sensing
Published By | Publication Date | Number of Pages |
BSI | 2018 | 38 |
This document describes methods of measuring temperature and injected current dependence of lasing wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications.
This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.
PDF Catalog
PDF Pages | PDF Title |
---|---|
2 | National foreword |
6 | Foreword |
7 | Introduction |
9 | 1 Scope 2 Normative references 3 Terms and definitions 4 Optical sensing using semiconductor lasers 4.1 General 4.2 Semiconductor laser 4.2.1 General |
10 | 4.2.2 Basic structure 4.2.3 Transverse mode stabilizing structure 4.2.4 Mode (wavelength) selection structure 4.2.5 Active layer structure |
11 | 4.3 Common sensing technique and equipment using semiconductor lasers 4.3.1 General 4.3.2 Tunable laser absorption spectroscopy (TLAS) |
12 | 4.3.3 Cavity ring down spectroscopy (CRDS) |
13 | 4.3.4 Photoacoustic spectroscopy (PAS) |
14 | 4.4 Temperature and current dependence of wavelength |
16 | 4.5 Effect of current injection on lasing wavelength |
17 | 4.6 Effect of ambient temperature on lasing wavelength |
18 | 5 Measurement method for temperature dependence of wavelength 5.1 General 5.2 Description of measurement setup and requirements |
19 | 5.3 Precautions to be observed |
20 | 5.4 Measurement procedures 6 Measurement method for current dependence of wavelength 6.1 General 6.2 Description of measurement setup and requirements |
21 | 6.3 Precautions to be observed |
22 | 6.4 Measurement procedures 6.4.1 Static current dependence 6.4.2 Dynamic current coefficient 7 Measurement method of spectral line width 7.1 General |
23 | 7.2 Description of measurement setup and requirements |
26 | 7.3 Precautions to be observed 7.4 Measurement procedures 7.4.1 System employing two semiconductor lasers [shown in Figures 11 and 12] 7.4.2 Self-delayed heterodyne [shown in Figure 13] |
28 | Annex A (informative) Essential ratings and characteristics |
37 | Bibliography |