BS EN 62417:2010

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Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Published By	Publication Date	Number of Pages
BSI	2010	12

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Categories: 31.080.30 - Transistors, BSI

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Description

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

PDF Catalog

PDF Pages	PDF Title
5	English CONTENTS
6	1 Scope 2 Abbreviations and letter symbols 3 General description
7	4 Test equipment 5 Test structures 6 Sample size 7 Conditions
8	8 Procedure 8.1 Bias temperature stress 8.2 Voltage sweep 9 Criteria
9	10 Reporting

Additional information

Status	Definitive
Pages	12
Publication Date	2010-06-30
ISBN	978 0 580 58622 4
Standard Number	BS EN 62417:2010
Title	Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Identical National Standard Of	EN 62417:2010, EN 61192-1:2003, IEC 62417:2010
Descriptors	Transistors, Metals, Semiconductor devices, Thermal testing, Ions, Semiconductors, Field-effect transistors, Migration (chemical), Electrical measurement, Oxides
Publisher	BSI
Committee	EPL/47
ICS Codes	31.080.30 - Transistors

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BS EN 62417:2010

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